Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

Carol A. Bessel; Ginger M. Denison; Joseph M. DeSimone; James DeYoung; Stephen Gross; Cynthia K. Schauer; Pamela M. Visintin

Etchant solutions for the removal of Cu(0) in a supercritical CO₂-based "dry" chemical mechanical planarization process for device fabrication

Carol A. Bessel, Ginger M. Denison, Joseph M. DeSimone, James DeYoung, Stephen Gross, Cynthia K. Schauer, Pamela M. Visintin

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO₂ has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO₂-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO₂ using ethyl peroxydicarbonate and a β-diketone chelating agent.

Original language	English (US)
Pages (from-to)	4980-4981
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	125
Issue number	17
State	Published - Apr 30 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

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Etchant solutions for the removal of Cu(0) in a supercritical CO₂-based "dry" chemical mechanical planarization process for device fabrication. / Bessel, Carol A.; Denison, Ginger M.; DeSimone, Joseph M.; DeYoung, James; Gross, Stephen; Schauer, Cynthia K.; Visintin, Pamela M.

In: Journal of the American Chemical Society, Vol. 125, No. 17, 30.04.2003, p. 4980-4981.

Research output: Contribution to journal › Article › peer-review

Bessel, Carol A. ; Denison, Ginger M. ; DeSimone, Joseph M. ; DeYoung, James ; Gross, Stephen ; Schauer, Cynthia K. ; Visintin, Pamela M. / Etchant solutions for the removal of Cu(0) in a supercritical CO₂-based "dry" chemical mechanical planarization process for device fabrication. In: Journal of the American Chemical Society. 2003 ; Vol. 125, No. 17. pp. 4980-4981.

@article{b43e2e1565e84d0e849446158d973d6f,

title = "Etchant solutions for the removal of Cu(0) in a supercritical CO2-based {"}dry{"} chemical mechanical planarization process for device fabrication",

abstract = "The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a {"}dry{"} etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.",

author = "Bessel, {Carol A.} and Denison, {Ginger M.} and DeSimone, {Joseph M.} and James DeYoung and Stephen Gross and Schauer, {Cynthia K.} and Visintin, {Pamela M.}",

year = "2003",

month = apr,

day = "30",

language = "English (US)",

volume = "125",

pages = "4980--4981",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "17",

}

TY - JOUR

T1 - Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

AU - Bessel, Carol A.

AU - Denison, Ginger M.

AU - DeSimone, Joseph M.

AU - DeYoung, James

AU - Gross, Stephen

AU - Schauer, Cynthia K.

AU - Visintin, Pamela M.

PY - 2003/4/30

Y1 - 2003/4/30

N2 - The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.

AB - The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.

UR - http://www.scopus.com/inward/record.url?scp=0242416946&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242416946&partnerID=8YFLogxK

M3 - Article

C2 - 12708839

AN - SCOPUS:0242416946

VL - 125

SP - 4980

EP - 4981

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 17

ER -