Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

Carol A. Bessel, Ginger M. Denison, Joseph M. DeSimone, James DeYoung, Stephen Gross, Cynthia K. Schauer, Pamela M. Visintin

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.

Original languageEnglish (US)
Pages (from-to)4980-4981
Number of pages2
JournalJournal of the American Chemical Society
Issue number17
StatePublished - Apr 30 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry


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