Abstract
The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 4980-4981 |
| Number of pages | 2 |
| Journal | Journal of the American Chemical Society |
| Volume | 125 |
| Issue number | 17 |
| State | Published - Apr 30 2003 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Catalysis
- Chemistry(all)
- Biochemistry
- Colloid and Surface Chemistry
Cite this
Bessel, C. A., Denison, G. M., DeSimone, J. M., DeYoung, J., Gross, S., Schauer, C. K., & Visintin, P. M. (2003). Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication. Journal of the American Chemical Society, 125(17), 4980-4981.