Etchant solutions for the removal of Cu(0) in a supercritical CO2-based "dry" chemical mechanical planarization process for device fabrication

Carol A. Bessel; Ginger M. Denison; Joseph M. DeSimone; James DeYoung; Stephen Gross; Cynthia K. Schauer; Pamela M. Visintin

Etchant solutions for the removal of Cu(0) in a supercritical CO₂-based "dry" chemical mechanical planarization process for device fabrication

Carol A. Bessel, Ginger M. Denison, Joseph M. DeSimone, James DeYoung, Stephen Gross, Cynthia K. Schauer, Pamela M. Visintin

Research output: Contribution to journal › Article › peer-review

53 Scopus citations

Abstract

The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO₂ has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO₂-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO₂ using ethyl peroxydicarbonate and a β-diketone chelating agent.

Original language	English (US)
Pages (from-to)	4980-4981
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	125
Issue number	17
State	Published - Apr 30 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

Cite this

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AU - DeSimone, Joseph M.

AU - DeYoung, James

AU - Gross, Stephen

AU - Schauer, Cynthia K.

AU - Visintin, Pamela M.

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AB - The microelectronics industry is focused on increasing chip complexity, improving the density of electron carriers, and decreasing the dimensions of the interconnects into the sub-0.25 μm regime while maintaining high aspect ratios. Water-based chemical mechanical planarization or polishing (CMP) faces several technical and environmental challenges. Condensed CO2 has significant potential for replacing current CMP solvents as a "dry" etching medium because of its unique properties. In working toward a condensed CO2-based CMP process, we have successfully investigated the oxidation and chelation of solid copper metal in liquid and supercritical CO2 using ethyl peroxydicarbonate and a β-diketone chelating agent.

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Etchant solutions for the removal of Cu(0) in a supercritical CO₂-based "dry" chemical mechanical planarization process for device fabrication

Abstract

All Science Journal Classification (ASJC) codes

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