Abstract
Monolayer two-dimensional transition metal dichalcogenides (TMDCs) such as MoS2 with broken inversion symmetry possesses two degenerate yet inequivalent valleys that can be selectively excited by circularly polarized light. This unique property renders interesting valley physics. The ability to manipulate valley degrees of freedom with light or external field makes them attractive for optoelectronic and spintronic applications. There is great demand for large area monolayer (ML) TMDCs for certain measurements and device applications. Recent reports on large area MLTDMCs focus on chemical vapor deposition growth. In this work, we report a facile approach to grow largescale continuousMLMoS2 nearly free of overgrowth and voids, by sulfurizing evaporated molybdenum trioxide ultrathin films. Photo conductivity scales with device sizes up to 4.5 mm, suggesting excellent film uniformity. The growth mechanism is found to be vaporization, diffusion, sulfurization and lateral growth, all at local micrometer scale. Our approach provides a new pathway for large-area MLTMDC growth and lithography-free device fabrication.
| Original language | English (US) |
|---|---|
| Article number | 075009 |
| Journal | Materials Research Express |
| Volume | 3 |
| Issue number | 7 |
| DOIs | |
| State | Published - Jul 1 2016 |
| Externally published | Yes |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Surfaces, Coatings and Films
- Polymers and Plastics
- Metals and Alloys
Cite this
Growth mechanism of largescale MoS2 monolayer by sulfurization of MoO3 film. / Taheri, Payam; Wang, Jieqiong; Xing, Hui; Destino, Joel F.; Arik, Mumtaz Murat; Zhao, Chuan; Kang, Kaifei; Blizzard, Brett; Zhang, Lijie; Zhao, Puqin; Huang, Shaoming; Yang, Sen; Bright, Frank V.; Cerne, John; Zeng, Hao.
In: Materials Research Express, Vol. 3, No. 7, 075009, 01.07.2016.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth mechanism of largescale MoS2 monolayer by sulfurization of MoO3 film
AU - Taheri, Payam
AU - Wang, Jieqiong
AU - Xing, Hui
AU - Destino, Joel F.
AU - Arik, Mumtaz Murat
AU - Zhao, Chuan
AU - Kang, Kaifei
AU - Blizzard, Brett
AU - Zhang, Lijie
AU - Zhao, Puqin
AU - Huang, Shaoming
AU - Yang, Sen
AU - Bright, Frank V.
AU - Cerne, John
AU - Zeng, Hao
PY - 2016/7/1
Y1 - 2016/7/1
N2 - Monolayer two-dimensional transition metal dichalcogenides (TMDCs) such as MoS2 with broken inversion symmetry possesses two degenerate yet inequivalent valleys that can be selectively excited by circularly polarized light. This unique property renders interesting valley physics. The ability to manipulate valley degrees of freedom with light or external field makes them attractive for optoelectronic and spintronic applications. There is great demand for large area monolayer (ML) TMDCs for certain measurements and device applications. Recent reports on large area MLTDMCs focus on chemical vapor deposition growth. In this work, we report a facile approach to grow largescale continuousMLMoS2 nearly free of overgrowth and voids, by sulfurizing evaporated molybdenum trioxide ultrathin films. Photo conductivity scales with device sizes up to 4.5 mm, suggesting excellent film uniformity. The growth mechanism is found to be vaporization, diffusion, sulfurization and lateral growth, all at local micrometer scale. Our approach provides a new pathway for large-area MLTMDC growth and lithography-free device fabrication.
AB - Monolayer two-dimensional transition metal dichalcogenides (TMDCs) such as MoS2 with broken inversion symmetry possesses two degenerate yet inequivalent valleys that can be selectively excited by circularly polarized light. This unique property renders interesting valley physics. The ability to manipulate valley degrees of freedom with light or external field makes them attractive for optoelectronic and spintronic applications. There is great demand for large area monolayer (ML) TMDCs for certain measurements and device applications. Recent reports on large area MLTDMCs focus on chemical vapor deposition growth. In this work, we report a facile approach to grow largescale continuousMLMoS2 nearly free of overgrowth and voids, by sulfurizing evaporated molybdenum trioxide ultrathin films. Photo conductivity scales with device sizes up to 4.5 mm, suggesting excellent film uniformity. The growth mechanism is found to be vaporization, diffusion, sulfurization and lateral growth, all at local micrometer scale. Our approach provides a new pathway for large-area MLTMDC growth and lithography-free device fabrication.
UR - http://www.scopus.com/inward/record.url?scp=84981489065&partnerID=8YFLogxK
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U2 - 10.1088/2053-1591/3/7/075009
DO - 10.1088/2053-1591/3/7/075009
M3 - Article
VL - 3
JO - Materials Research Express
JF - Materials Research Express
SN - 2053-1591
IS - 7
M1 - 075009
ER -