HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen Gross, Mark Wagner, James DeYoung, Joseph M. DeSimone

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

Original languageEnglish
Pages (from-to)2867-2869
Number of pages3
JournalChemistry of Materials
Volume15
Issue number15
DOIs
StatePublished - Jul 29 2003
Externally publishedYes

Fingerprint

Carbon Dioxide
Microelectronics
Carbon dioxide
Processing
Silicon wafers
Pyridine
Cleaning
Thin films
pyridine

All Science Journal Classification (ASJC) codes

  • Materials Chemistry
  • Materials Science(all)

Cite this

HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices. / Jones, Charles A.; Yang, Dongxing; Irene, Eugene A.; Gross, Stephen; Wagner, Mark; DeYoung, James; DeSimone, Joseph M.

In: Chemistry of Materials, Vol. 15, No. 15, 29.07.2003, p. 2867-2869.

Research output: Contribution to journalArticle

Jones, Charles A. ; Yang, Dongxing ; Irene, Eugene A. ; Gross, Stephen ; Wagner, Mark ; DeYoung, James ; DeSimone, Joseph M. / HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices. In: Chemistry of Materials. 2003 ; Vol. 15, No. 15. pp. 2867-2869.
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