HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones; Dongxing Yang; Eugene A. Irene; Stephen M. Gross; Mark Wagner; James DeYoung; Joseph M. DeSimone

doi:10.1021/cm034235w

HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen M. Gross, Mark Wagner, James DeYoung, Joseph M. DeSimone

Research output: Contribution to journal › Article

21 Scopus citations

Abstract

A "dry" supercritical CO₂-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO₂ thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

Original language	English (US)
Pages (from-to)	2867-2869
Number of pages	3
Journal	Chemistry of Materials
Volume	15
Issue number	15
DOIs	https://doi.org/10.1021/cm034235w
State	Published - Jul 29 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

Access to Document

10.1021/cm034235w

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Jones, C. A., Yang, D., Irene, E. A., Gross, S. M., Wagner, M., DeYoung, J., & DeSimone, J. M. (2003). HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices. Chemistry of Materials, 15(15), 2867-2869. https://doi.org/10.1021/cm034235w

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abstract = "A {"}dry{"} supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.",

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AU - DeYoung, James

AU - DeSimone, Joseph M.

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