HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen M. Gross, Mark Wagner, James DeYoung, Joseph M. DeSimone

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

Original languageEnglish (US)
Pages (from-to)2867-2869
Number of pages3
JournalChemistry of Materials
Volume15
Issue number15
DOIs
StatePublished - Jul 29 2003
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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