Abstract
A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.
Original language | English (US) |
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Pages (from-to) | 2867-2869 |
Number of pages | 3 |
Journal | Chemistry of Materials |
Volume | 15 |
Issue number | 15 |
DOIs | |
State | Published - Jul 29 2003 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Chemical Engineering(all)
- Materials Chemistry