HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones; Dongxing Yang; Eugene A. Irene; Stephen M. Gross; Mark Wagner; James DeYoung; Joseph M. DeSimone

doi:10.1021/cm034235w

HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen M. Gross, Mark Wagner, James DeYoung, Joseph M. DeSimone

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

A "dry" supercritical CO₂-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO₂ thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

Original language	English (US)
Pages (from-to)	2867-2869
Number of pages	3
Journal	Chemistry of Materials
Volume	15
Issue number	15
DOIs	https://doi.org/10.1021/cm034235w
State	Published - Jul 29 2003
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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10.1021/cm034235w

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abstract = "A {"}dry{"} supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.",

author = "Jones, {Charles A.} and Dongxing Yang and Irene, {Eugene A.} and Gross, {Stephen M.} and Mark Wagner and James DeYoung and DeSimone, {Joseph M.}",

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AU - Jones, Charles A.

AU - Yang, Dongxing

AU - Irene, Eugene A.

AU - Gross, Stephen M.

AU - Wagner, Mark

AU - DeYoung, James

AU - DeSimone, Joseph M.

PY - 2003/7/29

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AB - A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

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HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Abstract

All Science Journal Classification (ASJC) codes

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