HF etchant solutions in supercritical carbon dioxide for "dry" etch processing of microelectronic devices

Charles A. Jones, Dongxing Yang, Eugene A. Irene, Stephen Gross, Mark Wagner, James DeYoung, Joseph M. DeSimone

Research output: Contribution to journalArticle

21 Scopus citations


A "dry" supercritical CO2-based etchant solution containing HF/pyridine as an anhydrous HF source effectively dissolves SiO2 thin films on silicon wafers. These dilute etchant solutions are active in removal of post-etch residues in back-end-of-line cleaning of microelectronic structures.

Original languageEnglish
Pages (from-to)2867-2869
Number of pages3
JournalChemistry of Materials
Issue number15
Publication statusPublished - Jul 29 2003
Externally publishedYes


All Science Journal Classification (ASJC) codes

  • Materials Chemistry
  • Materials Science(all)

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