Surfactant enabled CO 2 cleaning processes for beol applications: Post barrier breakthrough

Mark Wagner, James DeYoung, Stephen Gross, Zach Hatcher, Ce Ma

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO 2 microemulsions combine the process advantages of supercritical CO 2 with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO 2 microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.

Original languageEnglish
Title of host publicationCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
EditorsJ. Ruzyllo, T. Hattori, R.L. Opila, R.E. Novak
Pages232-239
Number of pages8
Volume26
Publication statusPublished - 2003
Externally publishedYes
EventCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Wagner, M., DeYoung, J., Gross, S., Hatcher, Z., & Ma, C. (2003). Surfactant enabled CO 2 cleaning processes for beol applications: Post barrier breakthrough. In J. Ruzyllo, T. Hattori, R. L. Opila, & R. E. Novak (Eds.), Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium (Vol. 26, pp. 232-239)