Surfactant enabled CO 2 cleaning processes for beol applications: Post barrier breakthrough

Mark Wagner; James DeYoung; Stephen Gross; Zach Hatcher; Ce Ma

Surfactant enabled CO ₂ cleaning processes for beol applications: Post barrier breakthrough

Mark Wagner, James DeYoung, Stephen Gross, Zach Hatcher, Ce Ma

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO ₂ microemulsions combine the process advantages of supercritical CO ₂ with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO ₂ microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.

Original language	English
Title of host publication	Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
Editors	J. Ruzyllo, T. Hattori, R.L. Opila, R.E. Novak
Pages	232-239
Number of pages	8
Volume	26
State	Published - 2003
Externally published	Yes
Event	Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003

Other

Other	Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
Country/Territory	United States
City	Orlando, FL.
Period	10/12/03 → 10/17/03

All Science Journal Classification (ASJC) codes

Engineering(all)

Cite this

Surfactant enabled CO ₂ cleaning processes for beol applications : Post barrier breakthrough. / Wagner, Mark; DeYoung, James; Gross, Stephen et al.

Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium. ed. / J. Ruzyllo; T. Hattori; R.L. Opila; R.E. Novak. Vol. 26 2003. p. 232-239.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Wagner, M, DeYoung, J, Gross, S, Hatcher, Z & Ma, C 2003, Surfactant enabled CO ₂ cleaning processes for beol applications: Post barrier breakthrough. in J Ruzyllo, T Hattori, RL Opila & RE Novak (eds), Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium. vol. 26, pp. 232-239, Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium, Orlando, FL., United States, 10/12/03.

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AB - Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO 2 microemulsions combine the process advantages of supercritical CO 2 with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO 2 microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.

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ER -

Surfactant enabled CO ₂ cleaning processes for beol applications: Post barrier breakthrough

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All Science Journal Classification (ASJC) codes

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