Abstract
Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO 2 microemulsions combine the process advantages of supercritical CO 2 with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO 2 microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.
| Original language | English |
|---|---|
| Title of host publication | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium |
| Editors | J. Ruzyllo, T. Hattori, R.L. Opila, R.E. Novak |
| Pages | 232-239 |
| Number of pages | 8 |
| Volume | 26 |
| State | Published - 2003 |
| Externally published | Yes |
| Event | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium - Orlando, FL., United States Duration: Oct 12 2003 → Oct 17 2003 |
Other
| Other | Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium |
|---|---|
| Country | United States |
| City | Orlando, FL. |
| Period | 10/12/03 → 10/17/03 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Surfactant enabled CO 2 cleaning processes for beol applications : Post barrier breakthrough. / Wagner, Mark; DeYoung, James; Gross, Stephen; Hatcher, Zach; Ma, Ce.
Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium. ed. / J. Ruzyllo; T. Hattori; R.L. Opila; R.E. Novak. Vol. 26 2003. p. 232-239.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Surfactant enabled CO 2 cleaning processes for beol applications
T2 - Post barrier breakthrough
AU - Wagner, Mark
AU - DeYoung, James
AU - Gross, Stephen
AU - Hatcher, Zach
AU - Ma, Ce
PY - 2003
Y1 - 2003
N2 - Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO 2 microemulsions combine the process advantages of supercritical CO 2 with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO 2 microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.
AB - Low k films required to enable smaller feature sizes on IC chips call for development of new post breakthrough (BT) cleans that are effective and more compatible with the relatively fragile nature of these materials. Water-in-CO 2 microemulsions combine the process advantages of supercritical CO 2 with the solvent strength required to remove highly polar post BT cleans. This paper describes the use of water-in-CO 2 microemulsions as the basis for effective post BT cleaning formulations on patterned JSR 5109, dense SiLK ™ and porous SiLK™ wafers. Favorable results from compatibility studies with these clean formulations on blanket low k films using spectroscopic ellipsometry, FTIR spectroscopy and Al dot tests will also be described.
UR - http://www.scopus.com/inward/record.url?scp=3042819536&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=3042819536&partnerID=8YFLogxK
M3 - Conference contribution
VL - 26
SP - 232
EP - 239
BT - Cleaning Technology in Semiconductor Device Manufacturing VIII - Proceedings of the International Symposium
A2 - Ruzyllo, J.
A2 - Hattori, T.
A2 - Opila, R.L.
A2 - Novak, R.E.
ER -